Email this article Study of memristor structures based on copper and tin oxides
- Authors: Permyakov D.1, Strogonov A.1
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Affiliations:
- Воронежский государственный технический университет
- Issue: No 7 (228) (2023)
- Pages: 184-190
- Section: Micro and nanostructures
- URL: https://journals.eco-vector.com/1992-4178/article/view/632116
- DOI: https://doi.org/10.22184/1992-4178.2023.228.7.184.190
- ID: 632116
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Abstract
The article describes a method for forming a memristor structure by spray pyrolysis of tin oxide and electrochemical deposition of copper oxide. The results of measuring the electrical characteristics of fabricated memristor are discussed, and the factors affecting the reproducibility of its properties are analyzed.
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About the authors
D. Permyakov
Воронежский государственный технический университет
Author for correspondence.
Email: Dima.P.S@yandex.ru
аспирант кафедры твердотельной электроники
Russian Federation, ВоронежA. Strogonov
Воронежский государственный технический университет
Email: andreistrogonov@mail.ru
профессор кафедры твердотельной электроники
Russian Federation, ВоронежReferences
- Marani R., Gelao G., Perri A. G. A Review On Memristor Applications // Italian National Research Council, 2015.
- Muhammad K. Review on Various Memristor Models, Characteristics, Potential Applications, and Future Works // Trans. Electr. Electron. Mater. 2019. V.20, no. 4. PP. 289–298.
- Moreira E. N., Kendall J., Maruyama H., Nino J. C. Simplified sol-gel processing method for amorphous TiOx Memristors // Journal of Electroceramics. 2020. V. 44. PP. 52–58.
- OrtegaReyes L., AvilaGarcia A. Memristors based on thermal copper oxide // Journal of Materials Science: Materials in Electronics. 2020. V. 31. PP. 7445–7454.
- Chen S., Noori S., Villena M. A. Memristive Electronic Synapses Made by Anodic Oxidation // Chem. Mater. 2019. V. 31, no. 20. PP. 8394–8401.
- Dongale D. T., Mohite S. V., Bagade A. A. Development of Ag/WO3/ITO Thin Film Memristor Using Spray Pyrolysis Method // Electron. Mater. Lett. 2015. V. 30, no. 35, PP. 1–5.
- Ali S., Khan S., Khan A. Memristor Fabrication Through Printing // IEEE Access. 2021. V. 9. PP. 95970–95985.
- Yazdanparast S. Resistance switching of electrodeposited cuprous oxide. Doctoral Dissertations. 2424, 2015.
- Mohammad B., Jaoude M. A., Kumar V. State of the art of metal oxide memristor devices // Nanotechnol Rev. 2016. V. 5, no. 3. PP. 311–329.
- Насыров К. А., Гриценко В. А. Механизмы переноса электронов и дырок в диэлектрических пленках УФН. 2013. Т. 183. С. 1099–1114.
- Гудков А., Гогин А., Кик М. Мемристоры – новый тип элементов резистивной памяти для наноэлектроники // ЭЛЕКТРОНИКА: Наука, Технология, Бизнес. 2014. № 9.
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Fig. 1. X-ray diffraction of SnO2 film
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Fig. 2. X-ray diffraction of Cu2O film
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Fig. 3. Memristor based on SnO2 : Sb /Cu2O/Ag: a - structure; b - zone diagram
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Fig. 4. Hysteresis of SnO2 / Cu2O / Ag memristor
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Fig. 5. HRS dependence: a - in coordinates ln(J) (ln(A / cm2)) on F (B / m); b - in coordinates ln(F / J) (ln(A ∙ cm-2 ∙ B-1 ∙ m)) on F1 / 2 (B1 / 2 / m1 / 2)) on F1 / 2 (B1 / 2 / m1 / 2))
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