LDMOS: the new products by NIIET JSC
- Authors: Alekseev R.1, Semeykin I.1, Tsotsorin A.1, Kurshev P.1
-
Affiliations:
- АО «НИИЭТ»
- Issue: No 2 (223) (2023)
- Pages: 92-96
- Section: Electronic components
- URL: https://journals.eco-vector.com/1992-4178/article/view/629220
- DOI: https://doi.org/10.22184/1992-4178.2023.223.2.92.96
- ID: 629220
Cite item
Abstract
The article provides information about LDMOS process improvements at NIIET JSC, as well as about new microwave transistors under development by the company which are based on this technology and designed for DVB-T / DVB-T2 TV equipment.
Full Text
![Restricted Access](https://journals.eco-vector.com/lib/pkp/templates/images/icons/text_lock.png)
About the authors
R. Alekseev
АО «НИИЭТ»
Author for correspondence.
Email: redactor@electronics.ru
ведущий инженер
Russian FederationI. Semeykin
АО «НИИЭТ»
Email: redactor@electronics.ru
к. т. н., технический директор
Russian FederationA. Tsotsorin
АО «НИИЭТ»
Email: redactor@electronics.ru
к. ф.-м. н., начальник отдела
Russian FederationP. Kurshev
АО «НИИЭТ»
Email: redactor@electronics.ru
начальник лаборатории
Russian FederationReferences
- Combs A. Application Note AN-007: A Comparative Review of GaN, LDMOS, and GaAs for RF and Microwave Applications // NuWaves Engineering // https://nuwaves.com/wp-content/uploads/2020/08/AN-007-A-Comparative-Review-of-GaN-LDMOS-and-GaAs-for-RF-and-Microwave-Applications.pdf
- Joosting J.-P. Why LDMOS is the best technology for RF energy // eeNews Wireless. Technology News. 2018. June 21. // https://www.eenewseurope.com/en/why-ldmos-is-the-best-technology-for-rf-energy/
- Dhanyal H. R. et al. Miniaturized High-Efficiency Pulsed-Power Amplifier for Surveillance and Tracking Radar // 2020 5th International Conference on Computer and Communication Systems (ICCCS). – IEEE, 2020. PP. 840–843.
- Theeuwen S. et al. LDMOS technology for power amplifiers up to 12 GHz // 2018 13th European Microwave Integrated Circuits Conference (EuMIC). – IEEE, 2018. PP. 162–165.
- Алексеев Р., Цоцорин А., Черных М. Мощные СВЧ LDMOS-транзисторы для рабочих частот до 3 ГГц // ЭЛЕКТРОНИКА: Наука, Технология, Бизнес. 2020. № 4. С. 98–100.
- Алексеев Р., Куршев П., Цоцорин А. Влияние многослойного полевого электрода на степень выраженности эффекта квазинасыщения вольт-амперных характеристик мощных сверхвысокочастотных латеральных транзисторов // Физика и техника полупроводников. 2022. Т. 56. № 11. С. 1088–1092.
Supplementary files
![](/img/style/loading.gif)