Features of measuring the MIS-HEMT DIE-package thermal resistance

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Abstract

The article describes the method and equipment for measuring the die-package thermal resistance of normally open MIS-HEMT, and discusses the implementation features of this method.

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About the authors

A. Strogonov

Воронежский государственный технический университет

Author for correspondence.
Email: andreistrogonov@mail.ru

д.т.н., профессор кафедры твердотельной электроники

Russian Federation, Воронеж

M. Kharchenko

Воронежский государственный лесотехнический университет им. Г. Ф. Морозова; АО «ВЗПП-С»

Email: harchenko@vzpp-s.ru
Russian Federation, Воронеж; Воронеж

A. Khanin

Воронежский государственный лесотехнический университет им. Г. Ф. Морозова; АО «ВЗПП-С»

Email: cool.hanin@yandex.ru
Russian Federation, Воронеж; Воронеж

Supplementary files

Supplementary Files
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1. JATS XML
2. Fig. 1. Heat dissipation from the transistor crystal

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3. Fig. 2. Circuit diagram of the transistor for determining the PMT

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4. Fig. 3. Dependence of the open channel voltage on temperature

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5. Fig. 4. Schematic diagram of the tooling for measuring the thermal resistance "crystal - case"

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Copyright (c) 2023 Strogonov A., Kharchenko M., Khanin A.

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