Precision wafer thinning using glass intermediate carrier
- Autores: Sukhanov D.1
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Afiliações:
- ООО «Остек-ЭК»
- Edição: Nº 6 (2025)
- Páginas: 126-133
- Seção: Manufacturing technologies
- URL: https://journals.eco-vector.com/1992-4178/article/view/688723
- DOI: https://doi.org/10.22184/1992-4178.2025.247.6.126.132
- ID: 688723
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Resumo
The article considers methods of precision thinning of semiconductor wafers and substantiates the expediency of using a glass substrate. The influence of elastic characteristics and thermal expansion coefficients on the deformation of a bilayer structure is analyzed, and the stresses arising during wafer dismantling are investigated to check the reliability of the glass carrier.
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Sobre autores
D. Sukhanov
ООО «Остек-ЭК»
Autor responsável pela correspondência
Email: micro@ostec-group.ru
заместитель технического директора
RússiaBibliografia
- Brueckner J., Gaab A., Lin S., Chang E., Ono T., Singh V., Zhang J., Tussing S., Spiess W. Enabling wafer thinning using a glass carrier // Chip Scale Review. March – April, 2021
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Fig. 1. Graphs of the dependences of the deformation of a two-layer structure on various parameters: (a) – on the CTE mismatch: Eg = 70 GPa, tg = 1.1 mm; (b) – on the Young’s modulus of the carrier: tg = 1.1 mm, ΔCTE = 1.0 μm/°C; (c) – on the carrier thickness: Eg = 70 GPa; ΔCTE = 1.0 μm/°C
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Fig. 4. Schematic representation of the processes of edge trimming, mounting on a carrier and thinning
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Fig. 8. Graphs of the dependence of bending stress on the radii of curvature of glass plates for thicknesses of 0.5 and 0.7 mm
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