Precision wafer thinning using glass intermediate carrier

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Resumo

The article considers methods of precision thinning of semiconductor wafers and substantiates the expediency of using a glass substrate. The influence of elastic characteristics and thermal expansion coefficients on the deformation of a bilayer structure is analyzed, and the stresses arising during wafer dismantling are investigated to check the reliability of the glass carrier.

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Sobre autores

D. Sukhanov

ООО «Остек-ЭК»

Autor responsável pela correspondência
Email: micro@ostec-group.ru

заместитель технического директора

Rússia

Bibliografia

  1. Brueckner J., Gaab A., Lin S., Chang E., Ono T., Singh V., Zhang J., Tussing S., Spiess W. Enabling wafer thinning using a glass carrier // Chip Scale Review. March – April, 2021

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2. Fig. 1. Graphs of the dependences of the deformation of a two-layer structure on various parameters: (a) – on the CTE mismatch: Eg = 70 GPa, tg = 1.1 mm; (b) – on the Young’s modulus of the carrier: tg = 1.1 mm, ΔCTE = 1.0 μm/°C; (c) – on the carrier thickness: Eg = 70 GPa; ΔCTE = 1.0 μm/°C

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3. Fig. 2. Glass plates covering the CTE range of 3–13 µm/°C

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4. Fig. 3. General technological process of thinning and mechanical separation

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5. Fig. 4. Schematic representation of the processes of edge trimming, mounting on a carrier and thinning

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6. Fig. 5. The result of the process of mounting the plate on a glass carrier

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7. Fig. 6. Results of the dismantling process from a glass carrier [1]

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8. Fig. 7. Schematic representation of glass bending during the debonding process.

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9. Fig. 8. Graphs of the dependence of bending stress on the radii of curvature of glass plates for thicknesses of 0.5 and 0.7 mm

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Declaração de direitos autorais © Sukhanov D., 2025