Study of memristor structures based on copper and tin oxides

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详细

The article describes a method for forming a memristor structure by spray pyrolysis of tin oxide and electrochemical deposition of copper oxide. The results of measuring the electrical characteristics of fabricated memristor are discussed, and the factors affecting the reproducibility of its properties are analyzed.

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作者简介

D. Permyakov

Воронежский государственный технический университет

编辑信件的主要联系方式.
Email: Dima.P.S@yandex.ru

аспирант кафедры твердотельной электроники

俄罗斯联邦, Воронеж

A. Strogonov

Воронежский государственный технический университет

Email: andreistrogonov@mail.ru

профессор кафедры твердотельной электроники

俄罗斯联邦, Воронеж

参考

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2. Fig. 1. X-ray diffraction of SnO2 film

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3. Fig. 2. X-ray diffraction of Cu2O film

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4. Fig. 3. Memristor based on SnO2 : Sb /Cu2O/Ag: a - structure; b - zone diagram

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5. Fig. 4. Hysteresis of SnO2 / Cu2O / Ag memristor

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6. Fig. 5. HRS dependence: a - in coordinates ln(J) (ln(A / cm2)) on F (B / m); b - in coordinates ln(F / J) (ln(A ∙ cm-2 ∙ B-1 ∙ m)) on F1 / 2 (B1 / 2 / m1 / 2)) on F1 / 2 (B1 / 2 / m1 / 2))

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