Preparation and properties study of IGZO thin films obtained by PECVD method

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Abstract

In this paper, the plasma-enhanced chemical vapor deposition (PECVD) method was used for the first time to obtain InGaZnO (IGZO) thin films with various stoichiometry, morphology, and phase composition. The films were synthesized using the setup described in detail in [1–5]. The precursors were elementary high-purity In, Ga, and Zn, the carrier gases were Ar and H2, and a mixture of (Ar-H2-O2) was used as a plasma-forming gas. Deposition was performed on the high-pure quartz glass substrates. The composition of the samples was determined by the energy-dispersive X-ray analysis. The obtained samples were also examined by the scanning electron microscopy (SEM), atomic force microscopy (AFM), and optical profilometry methods. The electrical properties of the obtained films, such as the type, mobility, and carrier concentration, were established by the Hall effect measurements.

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About the authors

L. А. Mochalov

N. I. Lobachevsky Nizhny Novgorod State University

Author for correspondence.
Email: mochalovleo@gmail.com
ORCID iD: 0000-0002-7842-8563

Dr of Sciences (Tech.), Associate Professor, Head of Laboratory of High-Purity Materials Technology Research Institute of Chemistry

Russian Federation, Nizhny Novgorod

S. V. Telegin

N. I. Lobachevsky Nizhny Novgorod State University

Email: telegin@chem.unn.ru
ORCID iD: 0000-0002-4960-3502

Cand. of Sciences (Chem.), Associate Professor, Senior Researcher, Laboratory of High-Purity Materials Technology, Research Institute of Chemistry

Russian Federation, Nizhny Novgorod

Е. А. Slapovskaya

N. I. Lobachevsky Nizhny Novgorod State University

Email: slapovskaya@unn.ru
ORCID iD: 0009-0008-0670-2253

Engineer, Laboratory of High-Purity Materials Technology, Research Institute of Chemistry

Russian Federation, Nizhny Novgorod

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Supplementary files

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2. Fig. 1. Plasma-chemical reactor during emission diagnostics of the plasma-chemical IGZO synthesis process

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3. Fig. 2. Samples of IGZO films

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4. Fig. 3. Map of element allocation on the surface, typical for the obtained IGZO samples

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5. Fig. 4. Surface of IGZO samples with the approximate ratio of elements: a) 2:1:2; b) 1:1:1; c) 2:1:1

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6. Fig. 5. Surface topography of the IGZO samples obtained by the semi-contact AFM with an approximate ratio of elements: a) 2:1:2; b) 1:1:1; c) 2:1:1

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7. Fig. 6. Diffraction patterns of the IGZO samples with the approximate element ratios of 2:1:2, 1:1:1 and 2:1:1 Intensity, relative units

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8. Fig. 7. Dependence of the concentration and mobility of carriers on the ratio of macro-components in IGZO samples

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9. Fig. 8. Optical transmission spectra of the IGZO samples with the approximate element ratios of 2:1:2, 1:1:1 and 2:1:1 (top) and determination of the band-gap energy by the Tauc method (bottom)

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Copyright (c) 2025 Mochalov L.А., Telegin S.V., Slapovskaya Е.А.