INFLUENCE OF MOBILE POSITIVE CHARGE ON ELECTRONIC CONDUCTIVITY OF DIELECTRIC WITH HETEROGENEOUS BLOCKING BORDER


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Resumo

The correlation between size of the positive mobile charge and electronic conductivity of oxide on polycrystalline silicon is established by the experimental method of thermally stimulated polarization and depolarization of MIS-structures. The boundary conditions of the problem for the working model of mobile charge behavior in isolating layers which were generated on a rough semiconductor film, are formulated.

Sobre autores

G Perov

Email: mef@ngs.ru

V Sedinin

Email: sedvi@bk.ru

Bibliografia

  1. Lee, H. S. High electric field generated electron traps in oxide grown from polycrystalline silicon / H. S. Lee // Appl. Phys. Lett. 1980. Vol. 37, № 12. P. 1080-1082.
  2. Groesneken, G. A quantation model for the conductionin oxides thermally grown polycristallyne silicon / G. Groesneken, H. E. Maes // IEEE Trans. on El. Dev . 1986. Vol. ED-33, № 7. P. 1028-1042.
  3. Сальман, Е. Г. Изучение процессов образования и переноса заряда в слоях двуокиси кремния на кремнии / Е . Г. Сальман, В. Н. Вертопрахов, В. С. Данилович. ЦИОНТПИК Деп.вВИНИТИ: №558-76. Новосибирск, 1975.
  4. Salman, E. G. Thermally stimulated depolarisation current controlled by surface charge change / E. G. Salman, V . N. V ertoprakhov // Phys. Stat. Sol. 1988. V ol. 1008, № 2. P . 625-630.

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Declaração de direitos autorais © Perov G.V., Sedinin V.I., 2009

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Este artigo é disponível sob a Licença Creative Commons Atribuição 4.0 Internacional.

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