INFLUENCE OF MOBILE POSITIVE CHARGE ON ELECTRONIC CONDUCTIVITY OF DIELECTRIC WITH HETEROGENEOUS BLOCKING BORDER


Дәйексөз келтіру

Толық мәтін

Аннотация

The correlation between size of the positive mobile charge and electronic conductivity of oxide on polycrystalline silicon is established by the experimental method of thermally stimulated polarization and depolarization of MIS-structures. The boundary conditions of the problem for the working model of mobile charge behavior in isolating layers which were generated on a rough semiconductor film, are formulated.

Авторлар туралы

G Perov

Email: mef@ngs.ru

V Sedinin

Email: sedvi@bk.ru

Әдебиет тізімі

  1. Lee, H. S. High electric field generated electron traps in oxide grown from polycrystalline silicon / H. S. Lee // Appl. Phys. Lett. 1980. Vol. 37, № 12. P. 1080-1082.
  2. Groesneken, G. A quantation model for the conductionin oxides thermally grown polycristallyne silicon / G. Groesneken, H. E. Maes // IEEE Trans. on El. Dev . 1986. Vol. ED-33, № 7. P. 1028-1042.
  3. Сальман, Е. Г. Изучение процессов образования и переноса заряда в слоях двуокиси кремния на кремнии / Е . Г. Сальман, В. Н. Вертопрахов, В. С. Данилович. ЦИОНТПИК Деп.вВИНИТИ: №558-76. Новосибирск, 1975.
  4. Salman, E. G. Thermally stimulated depolarisation current controlled by surface charge change / E. G. Salman, V . N. V ertoprakhov // Phys. Stat. Sol. 1988. V ol. 1008, № 2. P . 625-630.

Қосымша файлдар

Қосымша файлдар
Әрекет
1. JATS XML

© Perov G.V., Sedinin V.I., 2009

Creative Commons License
Бұл мақала лицензия бойынша қолжетімді Creative Commons Attribution 4.0 International License.