An automatic device for measuring resistivity of the silicon four-point probe method

  • Autores: Vladimirov VM1, Shepov VN1, Grinin EF2, Sergiy ME3
  • Afiliações:
    1. Krasnoyarsk Scientific Centre, RussianAcademy of Sciences, Siberian Branch
    2. LLC NPF Elektron, Russia, Krasnoyarsk
    3. Special Engineering and Design Office Nauka of the Krasnoyarsk Scientific Centre, RussianAcademy of Sciences,Siberian Branch, Russia, Krasnoyarsk
  • Edição: Volume 10, Nº 5 (2009)
  • Páginas: 25-27
  • Seção: Articles
  • ##submission.datePublished##: 19.12.2009
  • URL: https://journals.eco-vector.com/2712-8970/article/view/508529
  • ID: 508529

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Resumo

An automatic device for measuring the resistivity of single-crystalline silicon by means of the four-point probe method has been developed.

Sobre autores

V Vladimirov

Krasnoyarsk Scientific Centre, RussianAcademy of Sciences, Siberian Branch

Krasnoyarsk Scientific Centre, RussianAcademy of Sciences, Siberian Branch

V Shepov

Krasnoyarsk Scientific Centre, RussianAcademy of Sciences, Siberian Branch

Krasnoyarsk Scientific Centre, RussianAcademy of Sciences, Siberian Branch

E Grinin

LLC NPF Elektron, Russia, Krasnoyarsk

LLC NPF Elektron, Russia, Krasnoyarsk

M Sergiy

Special Engineering and Design Office Nauka of the Krasnoyarsk Scientific Centre, RussianAcademy of Sciences,Siberian Branch, Russia, Krasnoyarsk

Special Engineering and Design Office Nauka of the Krasnoyarsk Scientific Centre, RussianAcademy of Sciences,Siberian Branch, Russia, Krasnoyarsk

Bibliografia

  1. SEMIMF-84. Test method for measuring resistivity of silicon wafers with in-line four-point probe [Electronic resource] // SEMI. Electronic data. Cop. 2008. Access mode : http://dom.semi.org/en/index.htm.Title from screen.
  2. SEMI MF-81. Test method for measuring radial resistivity variation on silicon wafers [Electronic resource] // SEMI. Electronic data. Cop. 2008. Access mode: http://dom.semi.org/en/index.htm.Title from screen.
  3. SEMIMF-1527. Guide for application of certified reference materials and reference wafers for calibration and control of instruments for measuring resistivity of silicon [Electronic resource] // SEMI. Electronic data. Cop. 2008. Access mode : http://dom.semi.org/en/index.htm.Title from screen.
  4. ГОСТ 19658-81. Кремний металлически в слитках. Технические условия = Monocrystalline silicon in ingost. Specifications. Введ. 01.01.1983. M.: Изд-во стандартов, 1990.59 с.

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Declaração de direitos autorais © Vladimirov V.M., Shepov V.N., Grinin E.F., Sergiy M.E., 2009

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Este artigo é disponível sob a Licença Creative Commons Atribuição 4.0 Internacional.