电邮这篇文章 An automatic device for measuring resistivity of the silicon four-point probe method
- 作者: Vladimirov VM1, Shepov VN1, Grinin EF2, Sergiy ME3
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隶属关系:
- Krasnoyarsk Scientific Centre, RussianAcademy of Sciences, Siberian Branch
- LLC NPF Elektron, Russia, Krasnoyarsk
- Special Engineering and Design Office Nauka of the Krasnoyarsk Scientific Centre, RussianAcademy of Sciences,Siberian Branch, Russia, Krasnoyarsk
- 期: 卷 10, 编号 5 (2009)
- 页面: 25-27
- 栏目: Articles
- ##submission.datePublished##: 19.12.2009
- URL: https://journals.eco-vector.com/2712-8970/article/view/508529
- ID: 508529
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作者简介
V Vladimirov
Krasnoyarsk Scientific Centre, RussianAcademy of Sciences, Siberian BranchKrasnoyarsk Scientific Centre, RussianAcademy of Sciences, Siberian Branch
V Shepov
Krasnoyarsk Scientific Centre, RussianAcademy of Sciences, Siberian BranchKrasnoyarsk Scientific Centre, RussianAcademy of Sciences, Siberian Branch
E Grinin
LLC NPF Elektron, Russia, KrasnoyarskLLC NPF Elektron, Russia, Krasnoyarsk
M Sergiy
Special Engineering and Design Office Nauka of the Krasnoyarsk Scientific Centre, RussianAcademy of Sciences,Siberian Branch, Russia, KrasnoyarskSpecial Engineering and Design Office Nauka of the Krasnoyarsk Scientific Centre, RussianAcademy of Sciences,Siberian Branch, Russia, Krasnoyarsk
参考
- SEMIMF-84. Test method for measuring resistivity of silicon wafers with in-line four-point probe [Electronic resource] // SEMI. Electronic data. Cop. 2008. Access mode : http://dom.semi.org/en/index.htm.Title from screen.
- SEMI MF-81. Test method for measuring radial resistivity variation on silicon wafers [Electronic resource] // SEMI. Electronic data. Cop. 2008. Access mode: http://dom.semi.org/en/index.htm.Title from screen.
- SEMIMF-1527. Guide for application of certified reference materials and reference wafers for calibration and control of instruments for measuring resistivity of silicon [Electronic resource] // SEMI. Electronic data. Cop. 2008. Access mode : http://dom.semi.org/en/index.htm.Title from screen.
- ГОСТ 19658-81. Кремний металлически в слитках. Технические условия = Monocrystalline silicon in ingost. Specifications. Введ. 01.01.1983. M.: Изд-во стандартов, 1990.59 с.
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