An automatic device for measuring resistivity of the silicon four-point probe method

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An automatic device for measuring the resistivity of single-crystalline silicon by means of the four-point probe method has been developed.

automatic device, single-crystalline silicon, resistivity, four-point probe method

SEMIMF-84. Test method for measuring resistivity of silicon wafers with in-line four-point probe [Electronic resource] // SEMI. Electronic data. Cop. 2008. Access mode : http://dom.semi.org/en/index.htm.Title from screen.
SEMI MF-81. Test method for measuring radial resistivity variation on silicon wafers [Electronic resource] // SEMI. Electronic data. Cop. 2008. Access mode: http://dom.semi.org/en/index.htm.Title from screen.
SEMIMF-1527. Guide for application of certified reference materials and reference wafers for calibration and control of instruments for measuring resistivity of silicon [Electronic resource] // SEMI. Electronic data. Cop. 2008. Access mode : http://dom.semi.org/en/index.htm.Title from screen.
ГОСТ 19658-81. Кремний металлически в слитках. Технические условия = Monocrystalline silicon in ingost. Specifications. Введ. 01.01.1983. M.: Изд-во стандартов, 1990.59 с.

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