An automatic device for measuring resistivity of the silicon four-point probe method
- Авторы: Vladimirov VM1, Shepov VN1, Grinin EF1, Sergiy ME1
-
Учреждения:
- Выпуск: Том 10, № 5 (2009)
- Страницы: 25-27
- Раздел: Статьи
- URL: https://journals.eco-vector.com/2712-8970/article/view/508529
- ID: 508529
Цитировать
Полный текст
Аннотация
An automatic device for measuring the resistivity of single-crystalline silicon by means of the four-point probe method has been developed.
Ключевые слова
Список литературы
- SEMIMF-84. Test method for measuring resistivity of silicon wafers with in-line four-point probe [Electronic resource] // SEMI. Electronic data. Cop. 2008. Access mode : http://dom.semi.org/en/index.htm.Title from screen.
- SEMI MF-81. Test method for measuring radial resistivity variation on silicon wafers [Electronic resource] // SEMI. Electronic data. Cop. 2008. Access mode: http://dom.semi.org/en/index.htm.Title from screen.
- SEMIMF-1527. Guide for application of certified reference materials and reference wafers for calibration and control of instruments for measuring resistivity of silicon [Electronic resource] // SEMI. Electronic data. Cop. 2008. Access mode : http://dom.semi.org/en/index.htm.Title from screen.
- ГОСТ 19658-81. Кремний металлически в слитках. Технические условия = Monocrystalline silicon in ingost. Specifications. Введ. 01.01.1983. M.: Изд-во стандартов, 1990.59 с.