An automatic device for measuring resistivity of the silicon four-point probe method

作者: Vladimirov VM¹, Shepov VN¹, Grinin EF², Sergiy ME³
隶属关系:
1. Krasnoyarsk Scientific Centre, RussianAcademy of Sciences, Siberian Branch
2. LLC NPF Elektron, Russia, Krasnoyarsk
3. Special Engineering and Design Office Nauka of the Krasnoyarsk Scientific Centre, RussianAcademy of Sciences,Siberian Branch, Russia, Krasnoyarsk
期: 卷 10, 编号 5 (2009)
页面: 25-27
栏目: Articles
URL: https://journals.eco-vector.com/2712-8970/article/view/508529
ID: 508529

如何引用文章

全文:

An automatic device for measuring the resistivity of single-crystalline silicon by means of the four-point probe method has been developed.

automatic device, single-crystalline silicon, resistivity, four-point probe method

Krasnoyarsk Scientific Centre, RussianAcademy of Sciences, Siberian Branch

Krasnoyarsk Scientific Centre, RussianAcademy of Sciences, Siberian Branch

LLC NPF Elektron, Russia, Krasnoyarsk

Special Engineering and Design Office Nauka of the Krasnoyarsk Scientific Centre, RussianAcademy of Sciences,Siberian Branch, Russia, Krasnoyarsk

SEMIMF-84. Test method for measuring resistivity of silicon wafers with in-line four-point probe [Electronic resource] // SEMI. Electronic data. Cop. 2008. Access mode : http://dom.semi.org/en/index.htm.Title from screen.
SEMI MF-81. Test method for measuring radial resistivity variation on silicon wafers [Electronic resource] // SEMI. Electronic data. Cop. 2008. Access mode: http://dom.semi.org/en/index.htm.Title from screen.
SEMIMF-1527. Guide for application of certified reference materials and reference wafers for calibration and control of instruments for measuring resistivity of silicon [Electronic resource] // SEMI. Electronic data. Cop. 2008. Access mode : http://dom.semi.org/en/index.htm.Title from screen.
ГОСТ 19658-81. Кремний металлически в слитках. Технические условия = Monocrystalline silicon in ingost. Specifications. Введ. 01.01.1983. M.: Изд-во стандартов, 1990.59 с.

附件文件

动作

1. JATS XML