Enviar artigo por via de e-mail The influence of mobile positive charge on electronic conductivity of dielectric with heterogeneous blocking border
- Autores: Perov GV1, Sedinin VI1
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Afiliações:
- Siberian State University of Telecommunications and Computer Science, Russia, Novosibirsk
- Edição: Volume 10, Nº 5 (2009)
- Páginas: 9-10
- Seção: Articles
- URL: https://journals.eco-vector.com/2712-8970/article/view/508506
- ID: 508506
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Resumo
The correlation between the size of a positive mobile charge and electronic conductivity of oxide on polycrystalline silicon is established with the help of experimental method of thermally stimulated polarization and depolarization of MIS-structures. The boundary conditions of a problem for the working model of behavior of a mobile charge in isolating layers generated on a rough semiconductor film are formulated.
Sobre autores
G Perov
Siberian State University of Telecommunications and Computer Science, Russia, NovosibirskSiberian State University of Telecommunications and Computer Science, Russia, Novosibirsk
V Sedinin
Siberian State University of Telecommunications and Computer Science, Russia, NovosibirskSiberian State University of Telecommunications and Computer Science, Russia, Novosibirsk
Bibliografia
- Han Sheng Lee. High electric field generated electron traps in oxide grown from polycrystalline silicon/Han Sheng Lee //Appl. Phys. Lett. 1980. Vol. 37. № 12. P. 1080-1082.
- Groesneken, G. Aquantationmodelforthe conduction in oxides thermally grown polycrystalline silicon / G. Groesneken, H.E.Maes//IEEE Trans. on El. Dev. 1986. Vol. ED-33. №. 7. P. 1028-1042.
- Сальман, Е. Г. Изучение процессов образования и переноса заряда в слоях двуокиси кремния на кремнии / Е. Г. Сальман, В. Н. Вертопрахов, В. С. Данилович. ЦИОНТ ПИК. Деп. в ВИНИТИ: № 558-76. Новосибирск, 1975.
- Salman, E. G. Thermally stimulated depolarization current controlled by surface charge change /E.G. Salman, V N. Vertoprakhov // Phys. Stat. Sol. (a). 1988. Vol. 1008. № 2. P. 625-630
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