Trends in packaging and assembly of discrete power components based on MOSFETs
- 作者: Ivanov V.1, Sukhanov D.1
-
隶属关系:
- ООО «Остек-ЭК»
- 期: 编号 10 (2024)
- 页面: 154-162
- 栏目: Design solutions
- URL: https://journals.eco-vector.com/1992-4178/article/view/653403
- DOI: https://doi.org/10.22184/1992-4178.2024.241.10.154.162
- ID: 653403
如何引用文章
详细
The article considers various types of power semiconductor devices. Information is provided on different types of packages for power components based on MOSFETs offered by a number of manufacturers.
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作者简介
V. Ivanov
ООО «Остек-ЭК»
编辑信件的主要联系方式.
Email: ivanov.v@ostec-group.ru
начальник группы
俄罗斯联邦D. Sukhanov
ООО «Остек-ЭК»
Email: sukhanov.d@ostec-group.ru
заместитель технического директора
俄罗斯联邦补充文件
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JATS XML
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8. The first version of the WPAK-D1 housing (a) and the second WPAK-D2 with reduced inductance (b)
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19.
Fig. 18. Assembly schemes based on the technologies of IR, Vishay (a) and Fairchild (b) companies
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