Modern methods of removing contaminants from substrates in microelectronics

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Abstract

The article discusses methods of liquid and dry cleaning of semiconductor substrates, features of the technological process and the equipment used.

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About the authors

V. Lelyaev

Компания «Глобал Микроэлектроника»

Author for correspondence.
Email: VL@global-micro.ru

руководитель направления

Russian Federation

References

  1. Ефимов И.Е., Козырь И.Я., Горбунов Ю.И. Микроэлектроника. Физические и технологические основы. Надежность. М.: Высшая школа, 1986.
  2. Шмаков М., Паршин В., Смирнов А. Школа производства ГПИС. Очистка поверхности пластин и подложек // Технологии в электронной промышленности, 2008. № 5.
  3. Burkman D. Optimizing the cleaning procedure for silicon wafers prior to high temperature operations // Semiconductor International. 1981. V. 14. No. 14. Jul.
  4. Wood L., Fairfield C., Wang K. Plasma cleaning of chip scale packages for improvement of wire bond strength // Electronic Materials and Packaging, 2000. (EMAP 2000). International Symposium on. IEEE, 2000.
  5. Корочкин И., Хриченко В. Три кита плазменной очистки. Глобал Микроэлектроника, Москва, 2019.
  6. Yield engineering services / YES G500 User Manual.

Supplementary files

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2. Fig. 1. Methods of removing contaminants

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3. Fig. 2. Physical principle of ion (plasma) cleaning

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4. Fig. 3. Design of a cylindrical reactor

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5. Fig. 4. Construction of a chamber with movable electrode shelves

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6. Fig. 5. Electron-free mode

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7. Fig. 6. SH300 plasma cleaning unit from the Korean manufacturer H&J

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Copyright (c) 2025 Lelyaev V.