AUTOMATIC DEVICE FOR MEASURING RESISTIVITY OF SILICON FOUR-POINT PROBE METHOD


Cite item

Full Text

Abstract

An automatic device for measuring the resistivity of single-crystalline silicon by means of the four-point probe method had been developed.

References

  1. ГОСТ 19658-81. Кремний монокристаллический в слитках. М. : Изд-во стандартов, 1990.

Supplementary files

Supplementary Files
Action
1. JATS XML

Copyright (c) 2009 Vladimirov V.M., Grinin E.F., Sergiy M.E., Shepov V.N.

Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 International License.

This website uses cookies

You consent to our cookies if you continue to use our website.

About Cookies