AUTOMATIC DEVICE FOR MEASURING RESISTIVITY OF SILICON FOUR-POINT PROBE METHOD
- Authors: Vladimirov VM1, Grinin EF1, Sergiy ME1, Shepov VN1
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Affiliations:
- Issue: Vol 10, No 4 (2009)
- Pages: 42-45
- Section: Articles
- URL: https://journals.eco-vector.com/2712-8970/article/view/508534
- ID: 508534
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Abstract
An automatic device for measuring the resistivity of single-crystalline silicon by means of the four-point probe method had been developed.
References
- ГОСТ 19658-81. Кремний монокристаллический в слитках. М. : Изд-во стандартов, 1990.
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