电邮这篇文章 Integration of a three-layer stack: the future of smart imaging devices
- 作者: Sukhanov D.1
-
隶属关系:
- ООО «Остек-ЭК»
- 期: 编号 7 (2025)
- 页面: 114-118
- 栏目: Micro and nanostructures
- URL: https://journals.eco-vector.com/1992-4178/article/view/690217
- DOI: https://doi.org/10.22184/1992-4178.2025.249.7.114.118
- ID: 690217
如何引用文章
开放存取
##reader.subscriptionAccessGranted##
详细
This article describes HD TSV and hybrid bonding technologies that enable the integration of various components for sensors and imaging systems. Optimization of the thinning process and reduction of the TSV aspect ratio eliminated electrical leakage and significantly improved TSV performance.
全文:
作者简介
D. Sukhanov
ООО «Остек-ЭК»
编辑信件的主要联系方式.
Email: micro@ostec-group.ru
заместитель технического директора
俄罗斯联邦参考
- Borel S., Nicolas S. Achieving 3-layer stacking integration for future smart imagers // Chip Scale Review. 2024. July-August.
补充文件
附件文件
动作
1.
JATS XML
2.
Fig. 1. Illustration of a three-layer intelligent imaging device: layer 1 is a pixel array (photodiode), layer 2 is an A/D signal processing device, layer 3 is an artificial intelligence (AI) device
下载 (163KB)
3.
Fig. 2. Schematic illustration of a 1L TV used to achieve the required characteristics of the HD TSV
下载 (84KB)
4.
Fig. 3. Top view and cross-sectional SEM images of a 1L HD TSV with a size of 1 x 10 μm: a – dense medium (chain with a pitch of 2 μm), b – isolated region
下载 (164KB)
5.
Fig. 4. Cross-sectional FIB-SEM image of a 2L TV: the pad pitch is 6 μm, and the dimensions of the HD TSV are 1 x 10 μm
下载 (87KB)
6.
Fig. 5. FIB-SEM 3D cross-section of 3L TV structure: pad pitch is 6 μm, HD TSV dimensions are 1 × 10 μm
下载 (127KB)
7.
Fig. 6. Cumulative percentage resistance of half-links of 3L TV series circuit with 6 μm pitch and 1 × 10 μm HD TSV
下载 (93KB)
8.
Fig. 7. SEM micrographs of 1 × 6 μm HD TSV cross-section in 1L architecture: a – general view in dense region (2 μm pitch), b – enlarged image of HD TSV top, c – enlarged image of HD TSV base
下载 (153KB)
9.
Fig. 8. SEM micrographs of the cross-section of a 1 × 6 μm HD TSV in 2L architecture: a – general view in the dense region (4 μm step), b – enlarged image of the base of the HD TSV, c – enlarged image of the top of the HD TSV
下载 (133KB)
