| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 15, № 3 (2014) |
Articles |
Dielectric properties of Bi 1-xLa xFeO 3 thin films |
(Rus)
|
| Том 10, № 2 (2009) |
Articles |
SIMULATION OF THE MAGNETIC STRUCTURE UPON ORDERING EG ORBITALSTO THE QUASI-ONE- AND QUASI-TWO-DIMENSIONAL MAGNETSBY QUANTUM MONTE CARLO METOD |
(Rus)
|
| Том 12, № 2 (2011) |
Articles |
The researchof raman spectra in CoxMn1-x solid solutions |
(Rus)
|
| Том 12, № 5 (2011) |
Articles |
COEVOLUTIONARY GENETIC PROGRAMMING ALGORITHM APPLICATION IN APPROXIMATION PROBLEM OF APPROXIMATION OF REFRACTOMETRIC PROPERTIES OF OPTICAL TRANSPARENT CRYSTALS |
(Rus)
|
| Том 12, № 5 (2011) |
Articles |
RESEARCH OF COEVOLUTION GENETIC PROGRAMMING ALGORITHM AND ITS APPLICATION IN THE PROBLEM OF MODEL ANALYSIS OF PHASE BOUNDARIES OF MAGNETIC STATE OF A CRYSTAL |
(Rus)
|
| Том 13, № 2 (2012) |
Articles |
SPIN AND CHARGE CORRELATIONS OF THE ELECTRONS IN THE DIMER WITH DEGENERATE ORBITALS AND ELECTRON OCCUPATION n = 1,5 |
(Rus)
|
| Том 10, № 1-1 (2009) |
Articles |
Magnetoelectriceffect in MN1-xCoxS |
(Rus)
|
| Том 11, № 1 (2010) |
Articles |
Magnetoelectric effect induced by orbital ordering of electrons |
(Rus)
|
| Том 24, № 1 (2023) |
Section 3. Technological Processes and Materials |
Influence of magnetic field on the dielectric characteristics in manganese sulfide substituted with thulium |
(Rus)
|
| Том 24, № 2 (2023) |
Section 3. Technological Processes and Materials |
Thermodynamic properties of anisotropic antiferromagnets with four-spin exchange |
(Rus)
|
| Том 23, № 1 (2022) |
Section 3. Technological Processes and Materials |
Impedance and dielectric properties of Bi2Sn2-хFeхO7stannates |
(Rus)
|
| Том 22, № 1 (2021) |
Section 3. Technological Processes and Materials |
Effect of electron-phonon interaction on transport properties in TmxMn1-xS |
(Rus)
(Eng)
|
| Том 22, № 3 (2021) |
Section 3. Technological Processes and Materials |
Incommensurate magnetic structure in an antiferromagnet with a strong exchange interaction between delocalized and localized electrons |
(Rus)
(Eng)
|
| Том 21, № 3 (2020) |
Section 3. Technological Processes and Materials |
Electronic structure change at cationic substitution of manganese sulfide by elements with variable valence |
(Eng)
|
| Том 21, № 3 (2020) |
Section 3. Technological Processes and Materials |
Influence of the magnetic field on transport properties of holmium – manganese sulfide |
(Eng)
|
| Том 21, № 4 (2020) |
Section 3. Technological Processes and Materials |
Study of structural properties of bismuth pyrostannate by Raman and IR spectroscopy |
(Eng)
|
| Том 24, № 3 (2023) |
Section 3. Technological Processes and Materials |
Magnetic impedance in nonstichiometric manganese sulfide |
(Rus)
(Eng)
|
